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| BA 886 Silicon PIN Diode Preliminary Data q q q BA 886 Current-controlled RF resistor for switching and attenuating applications Frequency range above 1 MHz Designed for low IM distortion Type BA 886 Marking PC Ordering Code (tape and reel) Q62702-A932 Pin Configuration Package1) SOT-23 Maximum Ratings Parameter Reverse voltage Forward current Operating temperature range Storage temperature range Thermal Resistance Junction - ambient2) Rth JA Symbol VR IF Top Tstg Values 50 50 - 55 ... + 150 Unit V mA - 55 ... + 125 C 450 K/W 1) 2) For detailed information see chapter Package Outlines. Package mounted on alumina 15 mm x 16.7 mm x 0.7 mm. BA 886 Electrical Characteristics at TA = 25 C, unless otherwise specified. Parameter Forward voltage IF = 50 mA Reverse current VR = 50 V Diode capacitance f = 1 MHz, VR = 50 V f= 100 MHz, VR = 0 V Forward resistance f = 100 MHz IF = 10 A IF = 1 mA IF = 10 mA Zero bias conductance f = 100 MHz, VR = 0 V Series inductance Symbol min. VF IR CT - - rf - - 6.5 gp LS - - 2400 58 7.8 40 2 - - 10 - - S Values typ. - - max. 1.15 50 - - Unit V nA pF 0.23 0.2 0.35 - nH Diode capacitance CT = f (VR) f = 1 MHz / f = 100 MHz Forward resistance rf = f (IF) f = 100 MHz |
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